1500 w low clamping factor transient voltage suppressor www. microsemi . com scottsdale division 1n6356 thru 1n6372, e3 or mpt-5 thru mpt-45c, e3 1n6356 thru 1n6372, e3 mpt-5 thru mpt-45c, e3 description appearance this transient voltage suppressor (tvs) series for 1n6356 thru 1n6372 are jedec registered selections for both unid irectional and bidirectional devices. the 1n6356 thru 1n6364 are unidirectional and the 1n6365 thru 1n6372 are bi-directional where they all provide a very low specified clamping factor for minimal clamping voltages (v c ) above their respective breakdown voltages (v br ) as specified herein. they are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as found in lower surge levels of iec61000-4-5 . they are also very successful in protecting ai rborne avionics and electrical systems. since their response time is virtually instantaneous, they can also protect from esd and eft per iec61000-4-2 and iec61000-4-4. do-13 (do-202aa) important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? unidirectional and bidirectional tvs series for thru-hole mounting ? suppresses transients up to 1500 watts @ 10/1000 s ? t clamping (0 volts to v (br) min): unidirectional ? less than 100 pico seconds. bidirectional ? less than 5 nano seconds. ? working voltage (v wm ) range 5 v to 45 v ? low clamping factor (ratio of actual v c /v br ): 1.33 @ full rated power and 1.20 @ 50% rated power ? hermetic sealed do-13 metal package ? options for screening in accordance with mil-prf-19500 for jan, jantx, jantxv, and jans are also available by adding mq, mx, mv, sp prefixes respectively to part numbers, e.g. mx1n6356, etc. ? rohs compliant devices available by adding ?e3? suffix ? surface mount equivalent packages also available as smcj6356 ? smcj6372 (consult factory for other surface mount options) ? plastic axial-leaded equivalents available in the 1n6373 ? 1n6389 series (see separate data sheet) ? designed to protect bipolar and mos microprocessor based systems. ? protection from switching transients and induced rf ? esd and eft protection per iec 61000-4-2 and -4-4 ? secondary lightning protection per iec61000-4-5 with 42 ohms source impedance: class 1, 2 & 3 1n6356 to 1n6372 class 4: 1n6356 to 1n6362 ? secondary lightning protection per iec61000-4-5 with 12 ohms source impedance: class 1 & 2: 1n6356 to 1n6372 class 3: 1n6356 to 1n6362 class 4: 1n6356 to 1n6358 ? secondary lightning protection per iec61000-4-5 with 2 ohms source impedance: class 2: 1n6356 to 1n6361 class 3: 1n6356 to 1n6358 ? inherently radiation hard per microsemi micronote 050 maximum ratings mechanical and packaging ? 1500 watts for 10/1000 s with repetition rate of 0.01% or less* at lead temperature (t l ) 25 o c (see figs. 1, 2, & 4) ? operating & storage temperatures: -65 o to +175 o c ? thermal resistance: 50 o c/w junction to lead at 0.375 inches (10 mm) from body or 110 o c/w junction to ambient when mounted on fr4 pc board with 4 mm 2 copper pads (1 oz) and track width 1 mm, length 25 mm ? dc power dissipation * : 1 watt at t l < +125 o c 3/8? or 10 mm from body (also see figure 5) ? forward surge current: 200 amps for 8.3ms half-sine wave at t a = +25 o c for unidirectional only (1n6356-6364) ? solder temperatures: 260 o c for 10 s (maximum) ? case: do-13 (do-202aa), welded, hermetically sealed metal and glass ? finish: all external metal surfaces are tin-lead or rohs compliant annealed matte-tin plating solderable per mil-std-750 method 2026 ? polarity: cathode connected to case and polarity indicated by diode symbol ? marking: part number and polarity diode symbol ? weight: 1.4 grams. (approx) ? tape & reel option: standard per eia-296 (add ?tr? suffix to part number) ? see package dimension on last page * tvs devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff volta ge microsemi scottsdale division page 1 (v wm ) except for transients that briefly dr ive the device into avalanche breakdown (v br to v c region). copyright ? 2007 10-03-2007 rev c 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
1500 w low clamping factor transient voltage suppressor www. microsemi . com scottsdale division 1n6356 thru 1n6372, e3 or mpt-5 thru mpt-45c, e3 1n6356 thru 1n6372, e3 mpt-5 thru mpt-45c, e3 electrical characteristics @ 25 o c (unidirectional) microsemi part number stand-off voltage (note 1) v wm volts maximum reverse leakage @v wm i d a minimum* breakdown voltage @ 1.0 ma v (br) (min) volts maximum clamping voltage (fig. 2) i pp1 = 1a v c volts maximum clamping voltage (fig. 2) @ i pp2 = 10a v c volts maximum peak pulse current i pp3 a 1n6356 1n6357 1n6358 1n6359 1n6360 mpt-5 mpt-8 mpt-10 mpt-12 mpt-15 5.0 8.0 10.0 12.0 15.0 300 25 2 2 2 6.0 9.4 11.7 14.1 17.6 7.1 11.3 13.7 16.1 20.1 7.5 11.5 14.1 16.5 20.6 160 100 90 70 60 1n6361 1n6362 1n6363 1n6364 mpt-18 mpt-22 mpt-36 mpt-45 18.0 22.0 36.0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.2 29.8 50.6 63.3 25.2 32.0 54.3 70.0 50 40 23 19 v f at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave. electrical characteristics @ 25 o c (bidirectional) 1n6365 1n6366 1n6367 1n6368 mpt-5c mpt-8c mpt-10c mpt-12c mpt-15c 5.0 8.0 10.0 12.0 15.0 300 25 2 2 2 6.0 9.4 11.7 14.1 17.6 7.1 11.4 14.1 16.7 20.8 7.5 11.6 14.5 17.1 21.4 160 100 90 70 60 1n6369 1n6370 1n6371 1n6372 mpt-18c mpt-22c mpt-36c mpt-45c 18.0 22.0 36.0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.8 30.8 50.6 63.3 25.5 32.0 54.3 70.0 50 40 23 19 c suffix indicates bidirectional note 1: tvs devices are normally selected a ccording to the reverse ?stand off voltage? (v wm ) which should be equal to or greater than the dc or continuous peak operating voltage level. * the minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on most integrated circuit manufacturers data sheets. similar dev ices are available with reduced clamping voltages where tighter regulated power supply voltages are employed. graphs microsemi scottsdale division page 2 copyright ? 2007 10-03-2007 rev c figure 1 figure 2 peak pulse power vs. pulse time typical characteristic clamping voltage vs. peak pulse current 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
1500 w low clamping factor transient voltage suppressor microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 3 www. microsemi . com scottsdale division 1n6356 thru 1n6372, e3 or mpt-5 thru mpt-45c, e3 1n6356 thru 1n6372, e3 mpt-5 thru mpt-45c, e3 pulse time duration (tp) is defined as that point where i p decays to 50% of peak value (i pp ). peak value i pp pulse current (i p ) in percent of i pp time (t) in milliseconds figure 4 figure 3 typical capacitance vs. breakdown voltage pulse wave form for exponential surge (unidirectional types) package dimensions figure 5 typical capacitance vs. breakdown voltage (bidirectional types) fig. 5 steady-state power derating curve stead y -state p ower dissi p ation ( watts ) t l ? lead tem p erature o c copyright ? 2007 10-03-2007 rev c
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